The National Natural Science Foundation of China's innovative research group â€œPrecision Manufacturing Theory and Technology Basic Researchâ€ has made important progress in the deformation-induced fabrication of new nanostructures in silicon. Professor Zhang Zhenyu and his doctoral students Wang Bo and Cui Junfeng have â€œNew Deformation-Induced Nanostructure in Silicon" was published in the international top journal Nano Letters.
Silicon dominates consumer electronics, solar cells, photovoltaics, and semiconductor devices, and is the foundation of the electronics industry, the world's largest industry. The performance of nanostructures has been significantly improved over bulk materials, so the deformation-induced nanostructures of silicon have received extensive attention and research over the past 50 years. Current deformation induction methods are mainly diamond cutting boards, compression, scratching, bending, nanoindentation and nano scratching. The diamond cutting block is loaded using a quasi-static method of hydrostatic pressure. The cutting speed of the scratch is 2.67-10 mm/s, which characterizes the change in the microstructure of the silicon at the micrometer scale rather than the nanoscale. The speed of nano-scratching is 0.4Î¼m/s, the speed of nanoindentation in air and in situ TEM is 8 and 60 nm/s, respectively. The speed of in-situ nano-mechanical bending loading of transmission electron microscope is 10-30 nm/ s, the compression speed is 2-4 nm/s, and the stretching speed is 5 nm/s. High-performance silicon devices have a processing and manufacturing loading speed of 15-18 m/s, so the current deformation-induced method of fabricating nanostructures differs from the actual processing speed by 3-10 orders of magnitude.
In response to this problem, Dalian University of Technology designed and manufactured a single abrasive diamond tool with a cutting edge radius of 2.5Î¼m and a projection angle of 140.7Â°, and developed a single abrasive nanometer depth ultra-precision grinding equipment to achieve grinding speed. A new method for ultra-precision grinding of a single abrasive nanometer depth of 40.2 m/s, processing amorphous, new tetragonal phase, slip zone, twin superlattice and single at a depth of 33 nm A new nanostructure of crystal. The first-principles simulation reveals that the new tetragonal phase is formed by the slip of the Si-I phase along the [1-1-2] crystal orientation of the (11-1) plane, and the shear stress is 2.16 GPa. The pressure under the cutting edge at a cutting depth of 33 nm was calculated to be 5.11 GPa. The new method of single-grain nano-depth ultra-precision grinding has opened up a new way for nano-scale deformation induced nanostructures. The different microstructures of the new nanostructures have different mechanical, electrical and optical properties, and have potential applications in transistors, ICs, diodes, solar cells, energy storage systems, MEMS and NEMS, and are new high-performance devices and devices. Design and manufacturing provide new ideas.
The research work has been awarded the Outstanding Youth Science Fund of the National Natural Science Foundation of China, the Innovation Research Group, the first Youth Changjiang Scholar of the Ministry of Education, the innovative talents of Liaoning Province Higher Education, the outstanding young scientific and technological talents of Dalian, Xinghai Jieqing, Xinghai Qingqian and Liaoning Major Equipment. Joint funding for the creation of collaborative innovation centers.
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